Tasks and Responsibilities:

• Development of novel epitaxy MOCVD epitaxy designs, growth processes and hardware targeting opto-electronic (micro;)LED applications based on InGaAlP/AlGaAs
• Design, execution and analysis of epitaxy experiments to enable continuous improvement based on proven and newly to be developed characterization techniques (e.g. µ-PL, PL, microscopy, SEM, XRD, AFM, SIMS, etc.)
• Transfer of developed epitaxy processes/novel epitaxy tool platforms to mass production
• Collaboration in DOE planning and interpretation with interdisciplinary, multicultural teams of expertis in modelling, epitaxy, front end processing and analytics

Qualifications

• Academic master's degree in physics, material science or similar (preferably with PhD)
• Relevant years of experience in area of III-V MOCVD, preferably in the AlGaAs material system on a senior expert level
• Relevant experience in area of III-V epitaxy preferably in the InGaAlP/AlGaAs material system using MOCVD reactors (preferably Aixtron vertical reactors) on a level of key experts
• Sound competence in epitaxial processes with deep dive in device performance and characterization methods of cutting-edge (opto-)electronic semiconductor samples and devices
• Knowledge of LED manufacturing and interaction of epitaxial designs with frontend processes
• Sound competence in characterization of (opto-)electronic semiconductor on epitaxy level as well as chip level
• Team player with problem solving attitude paired with high level of commitment
• Very good English skills mandatory (German would be a plus)